BB505C Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.5 dB typ. at f = 900 MHz
• High gain; PG = 24 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
REJ03G0364-0100Z
Rev.1.00
Jun.14.2004
Notes:
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “ES-”.
2. BB505C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
Channel power dissipation
I_D
Pch^note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm ).
Ratings
6
+6
–0
+6
–0
20
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.1.00, Jun.14.2004, page 1 of 8