BB505C Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505C
Power Gain vs. Gate Resistance
50
V_DS = 5 V
V_G1 = 5 V
40 ^VG2S ^{= 4 V}
f = 900 MHz
30
20
10
0
100
200
500
1000
Gate Resistance R_G (kΩ)
Power Gain vs.
Gate2 to Source Voltage
25
V_DS = 5 V
V_G1 = 5 V
20 _{RG = 220 kΩ}
f = 900 MHz
15
10
5
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
40
V_DS = 5 V
V_G1 = 5 V
30
R_G = 220 kΩ
f = 900MHz
20
10
Noise Figure vs. Gate Resistance
4
V_DS = 5 V
V_G1 = 5 V
3
V_G2S = 4 V
f = 900 MHz
2
1
0
100
5
200
500
1000
Gate Resistance R_G (kΩ)
Noise Figure vs.
Gate2 to Source Voltage
4
3
2
V_DS = 5 V
V_G1 = 5 V
1 _{RG = 220 kΩ}
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Rev.1.00, Jun.14.2004, page 5 of 8