BB505C Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505C
Electrical Characteristics
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V_(BR)DSS
Min
6
V_(BR)G1SS
+6
V_(BR)G2SS
+6
I_G1SS
—
I_G2SS
—
V_G1S(off)
0.5
V_G2S(off)
0.5
I_D(op)
7
|y_fs|
28
C_iss
1.4
C_oss
1.0
C_rss
—
PG
19
NF
—
Typ
—
—
—
—
—
0.7
0.7
11
33
1.75
1.4
0.03
24
1.5
Max
—
—
—
+100
+100
1.0
1.0
15
38
2.1
1.8
0.05
29
2.2
Unit
V
(Ta = 25°C)
Test Conditions
I_D = 200 µA, V_G1S = V_G2S = 0
V I_G1 = +10 µA, V_G2S = V_DS = 0
V I_G2 = +10 µA, V_G1S = V_DS = 0
nA V_G1S = +5 V, V_G2S = V_DS = 0
nA V_G2S = +5 V, V_G1S = V_DS = 0
V V_DS = 5 V, V_G2S = 4 V, I_D = 100 µA
V V_DS = 5 V, V_G1S = 5 V, I_D = 100 µA
mA V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ
mS V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 220 kΩ, f = 1 kHz
pF V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
pF ^RG ^{= 220 kΩ, f = 1 MHz}
pF
dB V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
dB ^RG ^{= 220 kΩ, f = 900 MHz}
Bias Circuit for Operating Items (I_D(op), |y_fs|, Ciss, Coss, Crss, NF, PG)
V_G2
Gate 2
R_G
V_G1
Gate 1
Drain
A
I_D
Source
Rev.1.00, Jun.14.2004, page 2 of 8