3SK296 Datasheet, PDF (6/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
S Parameter
Freq.
(MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
ANG.
0.999
–6.1
0.998
–9.1
0.992
–11.9
0.988
–14.8
0.985
–17.9
0.976
–20.6
0.971
–23.2
0.964
–26.3
0.961
–29.1
0.951
–32.2
0.949
–35.0
0.935
–37.6
0.933
–40.5
0.923
–42.9
0.916
–45.8
0.908
–49.0
0.900
–51.2
0.890
–54.0
0.876
–56.4
S21
MAG.
ANG.
1.98
172.2
1.97
168.4
1.96
165.0
1.96
161.0
1.94
157.1
1.92
153.7
1.91
149.9
1.88
146.8
1.87
142.8
1.86
139.4
1.86
136.1
1.81
132.9
1.78
129.4
1.77
125.7
1.75
122.6
1.72
119.1
1.70
115.8
1.67
112.6
1.65
109.3
(V_DS = 4 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 Ω)
S12
S22
MAG.
ANG.
MAG.
ANG.
0.00094
79.2
0.989
–4.2
0.00189
80.4
0.987
–6.1
0.00230
79.5
0.986
–7.9
0.00286
79.9
0.984
–9.8
0.00364
75.2
0.981
–11.5
0.00353
71.8
0.978
–13.4
0.00419
70.7
0.975
–15.2
0.00495
65.5
0.972
–17.2
0.00509
62.7
0.968
–19.1
0.00530
66.6
0.963
–20.8
0.00550
63.8
0.960
–22.8
0.00601
58.2
0.956
–24.5
0.00582
60.6
0.950
–26.3
0.00572
58.5
0.945
–28.0
0.00553
56.3
0.941
–29.9
0.00514
56.3
0.936
–31.7
0.00543
52.9
0.930
–33.4
0.00506
52.4
0.924
–35.2
0.00469
51.9
0.919
–37.0
Rev.3.00 Aug 10, 2005 page 6 of 7