3SK296 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1.0 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° ^{Scale: 0.5 / div.}
120°
60°
150°
30°
180°
0°
−150°
−30°
−120°
−90°
−60°
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° ^{Scale: 0.002/ div.}
120°
60°
150°
30°
180°
0°
−150°
−30°
−120°
−90°
−60°
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1.0 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
Rev.3.00 Aug 10, 2005 page 5 of 7