3SK296 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB Typ. at f = 900 MHz
• Capable of low voltage operation
REJ03G0815-0300
(Previous ADE-208-388A)
Rev.3.00
Aug.10.2005
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK–4)
2
Note: Marking is “ZQ–”
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 7