3SK296 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
Noise Figure vs. Drain Current
5
V_DS = 4 V
4
V_G2S = 3 V
f = 900 MHz
3
2
1
0
1
2
5
10
20
Drain current I_D (mA)
Noise Figure vs. Drain to Source Voltage
5
4
3
2
V_G2S = 3 V
1
I_D = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Power Gain vs. Drain to Source Voltage
25
20
15
10
5
V_G2S = 3 V
I_D = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage VDS (V)
Rev.3.00 Aug 10, 2005 page 4 of 7