H8S2110B Datasheet, PDF (528/559 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer Renesas H8S Family/H8S/2100 Series

Section 21 Electrical Characteristics
Table 21.2 DC Characteristics (2)
Conditions: V_CC = 3.0 V to 3.6 V, V_CCB = 3.0 V to 5.5 V, V_SS = 0 V, T_a = –20 to +75°C
Item
Symbol Min
Typ Max
Test
Unit Conditions
Input
RES
I_in
—
leakage
STBY, NMI, MD1,
—
current
MD0
Three-state Ports 1 to 9, A^*3, and B I_TSI
—
leakage
current
(off state)
Input
Ports 1 to 3
–I_P
5
pull-up
Ports 6 (P6PUE = 0)
30
MOS
and B
current
Port A^*3
30
Port 6 (P6PUE = 1)
3
— 10.0
— 1.0
— 1.0
— 150
— 300
— 600
— 100
µA V_in = 0.5 to
V – 0.5 V
CC
µA V_in = 0.5 to
V_CC – 0.5 V,
V_in = 0.5 to
V_CCB – 0.5 V
µA V_in = 0 V,
V = 3.0 V to
CC
3.6 V
V_CCB = 3.0 V
to 5.5 V
Input
RES
capacitance _NMI
(4) C
—
in
—
P52, P97, P42,
—
P86, PA7 to PA2
— 80
— 50
8
20
pF V = 0 V,
in
f = 1 MHz,
T_a = 25°C
Input pins except (4)
above
—
— 15
Current
Normal operation
I_CC
—
dissipation^*1 _{Sleep mode}
—
30 40
20 32
mA f = 10 MHz
f = 10 MHz
Standby mode^*2
—
1
5.0
µA T_a ≤ 50°C
—
— 20.0
50°C < T
a
RAM standby voltage
V
2.0
——
V
RAM
Notes: 1. Current dissipation values are for V_IH min = V_CC – 0.2 V, V_CCB – 0.2 V, and
V_IL max = 0.2 V with all output pins unloaded and the on-chip pull-up MOSs in the off
state.
2.
The
values
are
for
V
RAM
≤
V
CC
<
3.0
V,
V
IH
min
=
V
CC
–
0.2
V,
VB
CC
–
0.2
V,
and
V max = 0.2 V.
IL
3. The port A characteristics depend on V_CCB, and the other pins characteristics depend
on V_CC.
Rev. 2.00 Mar 21, 2006 page 490 of 518
REJ09B0299-0200