UPA2690T1R Datasheet, PDF (5/11 Pages) Renesas Technology Corp – COMPLEMENTARY MOSFET Low on-state resistance

μPA2690T1R
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS=4.5V
15
2.5V
10
5
Pulsed
0
0
0.5
1
1.5
2
V_DS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.2
1.0
0.8
0.6
0.4
0.2
VDS = 10V
ID = 1mA
0.0
-50
0
50
100
150
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
80
60
V_GS = 2.5V
40
4.5V
20
0
0.1
1
10
100
I_D - Drain Current - A
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
FORWARD TRANSFER CHARACTERISTICS
10
1
TA=150°C
75°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
VDS = 10V
Pulsed
0.5
1
1.5
2
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T_A = 150°C
75°C
10
25°C
-55°C
1
0.1
0.01
V_DS = 10V
Pulsed
0.001
0.001 0.01 0.1
1
10 100
I_D – Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = 2.0A
Pulsed
80
60
40
20
0
0
2
4
6
8
10
V_GS - Gate to Source Voltage - V
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