UPA2690T1R Datasheet, PDF (2/11 Pages) Renesas Technology Corp – COMPLEMENTARY MOSFET Low on-state resistance

μPA2690T1R
Electrical Characteristics (T_A = 25°C)
N-channel MOSFET
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ^∗1
Drain to Source On-state
Resistance ^∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ^∗1
Note: ∗1. Pulsed
Symbol
I_DSS
I_GSS
V_GS(off)
| y_fs |
R_DS(on)1
R_DS(on)2
C_iss
C_oss
C_rss
t_{d (on)}
t_r
t_{d (off)}
t_f
Q_G
Q_GS
Q_GD
V_F(S–D)
MIN.
0.5
5.0
TYP.
33
43
330
66
38
12
6.4
27
6.6
4.5
1.0
1.5
MAX.
1.0
±10
1.5
42
62
1.5
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test Conditions
V_DS = 20 V, V_GS = 0 V
V_GS = ±10 V, V_DS = 0 V
V_DS = 10 V, I_D = 1 mA
V_DS = 10 V, I_D = 2.0 A
V_GS = 4.5 V, I_D = 2.0 A
V_GS = 2.5 V, I_D = 2.0 A
V_DS = 10 V, V_GS = 0 V,
f = 1.0 MHz
I_D = 2.0 A, V_DD = 10 V,
V_GS = 4.5 V, R_G = 6 Ω
I_D = 4.0 A , V_DD = 16 V,
V_GS = 10 V
I_F = 4.0 A, V_GS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
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