UPA2690T1R Datasheet, PDF (1/11 Pages) Renesas Technology Corp – COMPLEMENTARY MOSFET Low on-state resistance

μPA2690T1R
COMPLEMENTARY MOSFET
20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ
Data Sheet
R07DS1000EJ0101
Rev.1.01
Mar 04, 2013
Description
The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• N-channel 2.5V, P-channel 1.8V drive available
• Low on-state resistance
N-channel
⎯ R_{DS (on)1} = 42 mΩ MAX. (V_GS = 4.5 V, I_D = 2.0 A)
⎯ R_{DS (on)2} = 62 mΩ MAX. (V_GS = 2.5 V, I_D = 2.0 A)
P-channel
⎯ R_{DS (on)1} = 79 mΩ MAX. (V_GS = –4.5 V, I_D = –1.5 A)
⎯ R_{DS (on)2} = 105 mΩ MAX. (V_GS = –2.5 V, I_D = –1.5 A)
⎯ R_{DS (on)3} = 182 mΩ MAX. (V_GS = –1.8 V, I_D = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2690T1R-E2-AX^∗1
6pinHUSON2020(Dual)
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol N-CHANNEL P-CHANNEL
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^∗1
Total Power Dissipation (1 unit, 5 s) ^∗2
Total Power Dissipation (2 units, 5 s) ^∗2
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
20
–20
±12
m10
±4.0
m3.0
±16
m12
1.5
2.3
Channel Temperature
T_ch
150
Storage Temperature
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
T_STG
–55 to +150
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
Unit
V
V
A
A
W
W
°C
°C
Caution: This product (N-channel) is electrostatic-sensitive device due to low ESD capability and should
be handled with caution for electrostatic discharge.
V_ESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ )
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
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