UPA2690T1R Datasheet, PDF (3/11 Pages) Renesas Technology Corp – COMPLEMENTARY MOSFET Low on-state resistance

μPA2690T1R
P-channel MOSFET
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ^∗1
Drain to Source On-state
Resistance ^∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ^∗1
Note: ∗1. Pulsed
Symbol
I_DSS
I_GSS
V_GS(off)
| y_fs |
R_DS(on)1
R_DS(on)2
R_DS(on)3
C_iss
C_oss
C_rss
t_{d (on)}
t_r
t_{d (off)}
t_f
Q_G
Q_GS
Q_GD
V_F(S–D)
MIN.
–0.4
4.5
TYP.
63
78
109
473
88
68
11.5
4.0
37.5
12.5
5.1
0.9
1.5
MAX.
–1.0
m10
–1.1
79
105
182
1.5
Unit
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test Conditions
V_DS = –20 V, V_GS = 0 V
V_GS = m8 V, V_DS = 0 V
V_DS = –10 V, I_D = –1 mA
V_DS = –5 V, I_D = –2 A
V_GS = –4.5 V, I_D = –1.5 A
V_GS = –2.5 V, I_D = –1.5 A
V_GS = –1.8 V, I_D = –1.5 A
V_DS = –10 V, V_GS = 0 V,
f = 1.0 MHz
I_D = –1.5 A, V_DD = –10.0 V,
V_GS = –4.0 V, R_G = 6 Ω
I_D = –3.0 A , V_DD = –16 V,
V_GS = –4.5 V
I_F = 3.0 A, V_GS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VDS(−)
90%
VDS
VDS
Wave Form ⁰
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
R07DS1000EJ0101 Rev.1.01
Mar 04, 2013
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