RJK0323JPD Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK0323JPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
1 ^D=1
0.5
0.2
0.1
0.1 ₀.0⁵
0^.02
0^.01
1^{shot pulse}
θch - c(t) = γs (t) x θch - c
θch - c = 3.125°C/W, Tc = 25°C
PD_M
PW
T
D=
PW
T
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
50 Ω
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 30 V
Avalanche Waveform
E_AR = ¹ L • I_AP2 •
2
V_DSS
V_{DSS –} V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr
td(o_ff)
t_f
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
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