RJK0323JPD Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK0323JPD
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
5V
40
3.1 V
30
20
V_GS = 2.9 V
10
Tc = 25°C
Pulse Test
0
5
10
Drain to Source Voltage V_DS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
25
I_D = 15 A
Pulse Test
20
15
Tc = 150°C
10
25°C
5
−40°C
0
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Preliminary
Maximum Safe Operation Area
1000
100
10 _μs
100 _μs
10
Operation
1 _{in this area}
is limited R_DS(on)
0.1
DC Operation
Tc = 25°C
1 shot Pulse
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
10
Tc = 150°C
1
0.1
25°C
−40°C
0.01
0.001
0
1
2
3
4
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Tc = 25°C
Pulse Test
10
V_GS = 4.5 V
10 V
1
1
10
100
1000
Drain Current I_D (A)
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
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