RJK0323JPD Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK0323JPD
Electrical Characteristics
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 4. Pulse test
Preliminary
Symbol Min
I_GSS
—
I_DSS
—
V_GS(off)
1.0
R_DS(on)
—
—
Ciss
—
Coss
—
Crss
—
Qg
—
Qgs
—
Qgd
—
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
V_DF
—
t_rr
—
Typ
—
—
—
7
9
2600
470
200
40
6
5
25
300
85
7
0.9
30
Max
±10
10
2.5
9
13
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
V_GS = ±20 V, V_DS = 0
V_DS = 30 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 15 A, V_GS= 10 V ^Note4
I_D = 15 A, V_GS= 4.5 V ^Note4
V_DS = 10 V, V_GS = 0
f = 1 MHz
V_DD = 10 V, V_GS = 10 V,
I_D = 30 A
V_GS = 10 V, I_D= 15 A,
V_DD = 10 V, R_L = 2.0 Ω
R_G = 4.7 Ω
I_F = 30 A, V_GS = 0
I_F = 30 A, V_GS = 0,
di_F/dt = 100 A/μs
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
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