RJJ0101DPD Datasheet, PDF (5/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0101DPD
Normalized Transient Thermal Impedance vs. Pulse Width
100
10
1shot pulse
1
Vin
–4 V
0.1
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
50 Ω
V_DD
= –10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
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