RJJ0101DPD Datasheet, PDF (3/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0101DPD
Main Characteristics
Power vs. Temperature Derating
20
16
12
8
4
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–16 _{–10 V}
–4.5 V
–12
–3 V
–2.5 V
–2.2 V
–2 V
–8
V_GS = –1.8 V
–4
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–250
Ta = 25°C
–200
–150
–4.0 A
–100
–1.5 A
–50
–1.0 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 3 of 6
Maximum Safe Operation Area
–100
Ta = 25°C
1 shot Pulse
–10
PW
= _{1 ms}
10 µs
Operation in
–1 ^{this area is}
limited by R_DS(on)
–0.1
–0.1
–1
–10
–100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–16
V_DS = –10 V
Pulse Test
–12
–8
–4
75°C
25°C
0
Tc = –25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Ta = 25°C
100 _{VGS = –1.8 V}
–2.5 V
–4.5 V
10
1
–0.1
–1
–10
Drain Current I_D (A)