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RJJ0101DPD Datasheet, PDF (4/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching | |||
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RJJ0101DPD
Static Drain to Source on State Resistance
vs. Temperature
120
Pulse Test
100
â4 A
â1.8 V
80
60
â1 A
â1.5 A
â4 A â1.5 A â1 A
â2.5 V
40
ID = â4 A, â1.5 A, â1 A
VGS = â4.5 V
20
â25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
10000
VGS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0 â2 â4 â6 â8 â10 â12
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = â4.5 V, VDD = â10 V
td(off)
tf
tr
100
td(on)
10
â0.1
â1
â10
Drain Current ID (A)
â100
Forward Transfer Admittance vs.
Drain Current
100
Pulse Test
30
10
Tc = â25°C
3
75°C
25°C
1
0.3
0.1
â0.1
VDS = â10 V
â0.3
â1
â3
â10
Drain Current ID (A)
Dynamic Input Characteristics
0
0
ID = â3 A
â8
â16
0
â5 V
â7 V
VDD = â10, â12 V
â7 V
â5 V
â4
â10 V
VDD = â12 V
10
Gate Charge Qg (nc)
â8
20
Reverse Drain Current vs.
Source to Drain Voltage
â16
Pulse Test
â12
â5 V
â8
VGS = 0, 5 V
â4
Ta = 25°C
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSDF (V)
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 4 of 6
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