RJJ0101DPD Datasheet, PDF (2/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0101DPD
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse)
Pch ^Note1
θch-c
Tch
Tstg
Ratings
–12
±8
–5
–20
15
8.33
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to Source breakdown
voltage
Gate to Source breakdown
voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Symbol
V_(BR)DSS
V_(BR)GSS
I_DSS
I_GSS
V_GS(off)
R_DS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-Drain diode forward voltage
Notes: 2. Pulse test
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min.
–12
±8
—
—
–0.3
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
38
48
60
1380
235
115
35
150
490
350
-0.8
Max.
—
—
–1
±10
–1.1
52
70
93
—
—
—
—
—
—
—
–1.1
(Ta = 25°C)
Unit
Conditions
V
I_D = –10 mA, V_GS = 0 V
V
I_G = ±100 µA, V_GS = 0 V
µA
V_DS = –12 V, V_GS = 0 V
µA
V_GS = ±6.4V, V_DS = 0 V
V
I_D = –1 mA, V_DS = –10 V
mΩ
I_D = –1.5 A, V_GS = –4.5 V ^Note2
mΩ
I_D = –1.5 A, V_GS = –2.5 V ^Note2
mΩ
I_D = –1.5 A, V_GS = –1.8 V ^Note2
pF
V_DS = –10 V
pF
V_GS = 0 V
pF ^{f = 1 MHz}
ns
V_DD = –10 V
ns ID = –1.5 A
ns
V_GS = –4 V
ns
R_GS = 4.7 Ω
V
I_S = –3 A, V_GS = 0 V
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
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