RJH60D7DPM Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D7DPM
Switching Characteristics (Typical) (1)
1000
td(off)
100
td(on)
10
tf
tr
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1
10
100
1000
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Ta = 25°C
1000
td(off)
100 _td(on)
tr tf
10
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 150°C
1000
E(off)
100
10
E(on)
1
1
10
100
1000
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Ta = 25°C
1000
E(off)
E(on)
100
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
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