RJH60D7DPM Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D7DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
3 ^{IC = 50 A}
90 A
2
1
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
160
Ta = 25°C
150°C
120
80
40
V_CE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage V_GE (V)
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
Ta = 25°C
Cies
1000
100
Coes
Cres
V_GE = 0 V
f = 1 MHz
10
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V_CE (V)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 150°C
Pulse Test
4
3 ^{IC = 50 A}
90 A
2
1
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Diode Forward Characteristics (Typical)
120
100
Ta = 25°C
150°C
80
60
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltege V_F (V)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
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