RJH60D7DPM Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D7DPM
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4.0
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
Short circuit withstand time
t_sc
3.0
FRD forward voltage
FRD reverse recovery time
V_F
—
t_rr
—
Notes: 3. Pulse test
Preliminary
Typ
—
—
—
1.6
1.8
3150
180
95
125
25
50
60
50
180
50
5.0
1.4
100
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
(Ta = 25°C)
Unit
Test Conditions
A V_CE = 600 V, V_GE = 0
A V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 50 A, V_GE = 15 V ^Note3
V
I_C = 90 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF
V_GE = 0
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 50 A}
ns V_CC = 300 V, V_GE = 15 V
ns ^IC ^{= 50 A}
ns ^{Rg = 5 ï€} 
ns ^{(Inductive load)}
s V_CC  400 V, V_GE = 15 V
V
I_F = 30 A ^Note3
ns I_F = 30 A
di_F/dt = 100 A/s
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
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