RJH60D7DPM Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D7DPM
Main Characteristics
Collector Dissipation vs.
Case Temperature
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
PW
100
100 _μs
= _{10 μs}
10
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
Pulse Test
160 Ta = 25°C
11 V
10 V
120
15 V
80
40
9V
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Preliminary
Maximum DC Collector Current vs.
Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Turn-off SOA
200
160
120
80
40
0
0
200
400
600
800
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
Pulse Test _{15 V}
160 Ta = 150°C
120
80
40
11 V
10 V
9V
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
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