RJH6087BDPK_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH6087BDPK
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tj = 25°C, Inductive load
100
10
1
td(off)
tf
td(on)
tr
10
100
Collector Current I_C (A)
Switching Characteristics (Typical) (3)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Tj = 25°C, Inductive load
td(off)
100
tf
tr ^td(on)
10
1
10
100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (5)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Rg = 5 Ω, Inductive load
td(off)
100
tf
tr
td(on)
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
100
Eoff
10
Eon
1
0.1
1
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tj = 25°C, Inductive load
10
100
Collector Current I_C (A)
Switching Characteristics (Typical) (4)
10000
Eoff
1000
Eon
100
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Tj = 25°C, Inductive load
10
1
10
100
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (6)
10000
Eoff
1000
Eon
100
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Rg = 5 Ω, Inductive load
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
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