RJH6087BDPK_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH6087BDPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
I_CES
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
3.0
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
C-E diode Forward voltage
V_ECF1
—
C-E diode reverse recovery time
t_rr
—
Notes: 3. Pulse test
Typ
—
—
—
2.65
3.2
1800
200
16
45
35
95
55
1.4
100
Preliminary
Max
10
±1
5.5
3.5
—
—
—
—
—
—
—
—
1.9
—
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
V_CE = 600 V, V_GE = 0
V_GE = ±30 V, V_CE = 0
V_CE = 10 V, I_C = 1 mA
I_C = 25 A, V_GE = 15 V ^Note3
I_C = 50 A, V_GE = 15 V ^Note3
V_CE = 25 V
V_GE = 0
f = 1 MHz
I_C = 30 A
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω
Inductive Load
I_F = 30 A ^Note3
I_F = 30 A
di_F/dt = 100 A/μs
R07DS0389EJ0100 Rev.1.00
May 11, 2011
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