RJH6087BDPK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH6087BDPK
Main Characteristics
1000
100
Maximum Safe Operation Area
PW = 10 μs
10
1
0.1
0.01
Ta = 25°C
1 shot pulse
0.001
0.1
1
10
100 1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
100
V_CE = 10 V
Pulse Test
80
60
Ta = 75°C
40
25°C
20
–25°C
0
2
4
6
8
10 12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
7
V_GE = 15 V
6 ^{Pulse Test}
5
I_C = 100 A
4
50 A
3
25 A
20 A
2
10 A
1
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
8.4 V
9V
10 V
60
13 V
15 V
40
8V
7.6 V
7.2 V
6.8 V
20
V_GE = 6.4 V
0
0123456
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
4
I_C = 50 A
2
25 A 20 A 10 A
0
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
Page 3 of 7