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| RJH6087BDPK_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching | |||
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Preliminary Datasheet
RJH6087BDPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0389EJ0100
Rev.1.00
May 11, 2011
Features
⢠Ultra high speed switching
tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
⢠Low on-state voltage
⢠Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES
VGES
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
Ratings
600
±30
50
100
100
223.2
0.56
150
â55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C / W
°C
°C
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
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