RJH6086BDPK_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 600 V - 45 A - IGBT High Speed Power Switching

RJH6086BDPK
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tj = 25°C
tr includes the diode recovery
100 _td(off)
t_f
td(on)
tr
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 45 A, Tj = 25°C
tr includes the diode recovery
100
tr
td(o_ff)
t_f
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 45 A, Rg = 5 Ω
tr includes the diode recovery
tr
100
t_f
td(o_ff) ^td(on)
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
1000
100
Eoff
Eon
10
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tj = 25°C
Eon includes the diode recovery
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
Eoff
1000
Eon
V_CC = 300 V, V_GE = 15 V
I_C = 45 A, Tj = 25°C
Eon includes the diode recovery
100
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
V_CC = 300 V, V_GE = 15 V
I_C = 45 A, Rg = 5 Ω
Eon includes the diode recovery
1000 Eoff
Eon
100
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
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