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| RJH6086BDPK_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – 600 V - 45 A - IGBT High Speed Power Switching | |||
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RJH6086BDPK
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
ï¾
Gate to emitter leak current
IGES
ï¾
Gate to emitter cutoff voltage
VGE(off)
3.0
Collector to Emitter saturation voltage VCE(sat)
ï¾
VCE(sat)
ï¾
Input capacitance
Cies
ï¾
Output capacitance
Coes
ï¾
Reveres transfer capacitance
Cres
ï¾
Switching time
Collector to emitter diode forward
voltage
td(on)
ï¾
tr
ï¾
td(off)
ï¾
tf
ï¾
VECF
â
Collector to emitter diode reverse
recovery time
trr
â
Notes: 3. Pulse test
Typ
ï¾
ï¾
ï¾
2.65
3.4
1420
165
15
41
71
84
36
1.4
100
Max
10
±1
5.5
3.5
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
1.9
â
Unit
ïA
ïA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 22 A, VGE = 15 V Note3
IC = 45 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1MHz
IC = 30 A
VCC = 300 V, VGE = 15 V
Rg = 5 ïï
Inductive Load
IF = 30 A Note3
ns IF = 30 A
diF/dt = 100 A/ïs
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
Page 2 of 7
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