RJH6086BDPK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 600 V - 45 A - IGBT High Speed Power Switching

RJH6086BDPK
Main Characteristics
Maximum Safe Operation Area
1000
100
PW = 10 μs
10
1
0.1
0.01
Tc = 25°C
1 shot pulse
0.001
0.1
1
10
100 1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
100
V_CE = 10 V
Pulse Test
80
60
40
Ta = 75°C
25°C
20
–25°C
0
2
4
6
8
10 12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
7
V_GE = 15 V
6 ^{Pulse Test}
5
I_C = 90 A
4
45 A
3
22 A
20 A
2
10 A
1
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
9.5 V
10 V
11 V
60
12 V
15 V
40
9V
8.5 ^V
8V
7.5 V
7V
20
V_GE = 6.5 V
0
0123456
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5.0
Ta = 25°C
4.5
Pulse Test
4.0
3.5
I_C = 45 A
3.0
2.5
2.0
4
22A
20 A ^{10 A}
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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