RJH6086BDPK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600 V - 45 A - IGBT High Speed Power Switching

RJH6086BDPK
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20
V_GE = 0 V
Ta = 25°C
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
I_C = 45 A
Ta = 25°C
600
V_CE
V_CC = 480 V
300 V
100 V
16
V_GE
12
400
8
200
0
0
4
V_CC = 480 V
300 V
100 V
0
10 20 30 40 50
Gate Charge Qg (nC)
Preliminary
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0
50 100 150 200 250
Collector to Emitter Voltage V_CE (V)
R07DS0470EJ0100 Rev.1.00
Sep 28, 2011
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