RJH30H2DPK-M0 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJH30H2DPK-M0
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
100
Pulse Test
Ta = 25°C
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage V_ECF (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 _0.05
0.02
0.03 ^0.01
0.01
PDM
1m
10 m
Pulse Width PW (s)
D=
PW
T
PW
T
100 m
1
Preliminary
Switching Time Test Circuit
Ic Monitor
R_L
Vin Monitor
Rg
D.U.T.
V_CC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
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