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| RJH30H2DPK-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching | |||
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RJH30H2DPK-M0
Silicon N Channel IGBT
High speed power switching
Features
ï· Trench gate and thin wafer technology (G6H-II series)
ï· Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
ï· High speed switching: tr = 100 ns typ, tf = 180 ns typ
ï· Low leak current: ICES = 1 ïA max
ï· Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
G
12 3
Preliminary Datasheet
R07DS0464EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector to emitter diode Forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Tc = 25ï°C
Symbol
VCES
VGES
Ic
ic(peak) Note1
iDF(peak) Note1
PC Note2
ï±j-c
Tj
Tstg
Ratings
360
±30
35
250
100
60
2.08
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
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