RJH30H2DPK-M0 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJH30H2DPK-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
V_GE = 0 V, f = 1 MHz
Ta = 25°C
1000
Cies
100
Coes
Cres
10
0
20 40 60 80 100
Colloctor to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
V_CC = 150 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
tf
100
td(off)
tr
td(on)
10
1
10
100
Colloctor Current I_C (A)
Switching Characteristics (Typical) (3)
1000
I_C = 35 A, V_GE = 15 V
R_L = 4.5 Ω, Rg = 5 Ω
tf
tr
100
td(off)
td(on)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Dynamic Input Characteristics (Typical)
400
V_CC = 150 V
I_C = 35 A
Ta = 25°C
300
16
V_GE
12
200
8
100
0
0
4
V_CE
0
8
16 24 32 40
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
1000
I_C = 35 A, V_GE = 15 V
R_L = 4.5 Ω, Ta = 25°C
tf
100
tr
td(off)
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
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