RJH30H2DPK-M0 Datasheet, PDF(2/7 Page) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

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RJH30H2DPK-M0 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

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RJH30H2DPK-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

Gate to emitter leak current

IGES

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation voltage VCE(sat)

Input capacitance

Cies

Output capacitance

Coes

Reveres transfer capacitance

Cres

Total gate charge

Gate to emitter charge

Qge

Gate to collector charge

Qgc

Switching time

td(on)

td(off)

FRD forward voltage

FRD reverse recovery time

trr

Notes: 3. Pulse test.

Preliminary

Typ

1.4

1200

0.02

0.1

0.06

0.18

1.4

Max

Â±100

1.9

1.7

Unit

ïA

ïs

(Ta = 25Â°C)

Test Conditions

VCE = 360 V, VGE = 0

VGE = Â± 30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 35 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 150 V

IC = 35 A

RL = 4.5 ï

VGE = 15 V

RG = 5 ï

IF = 20 A Note3

ns IF = 20 A

diF/dt = 100 A/ïs

R07DS0464EJ0200 Rev.2.00

Jun 15, 2011

Page 2 of 6

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