RJF0610JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0610JSP
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
0.0001
10 μ 100 μ 1 m
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
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