RJF0610JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0610JSP
Static Drain to Source on State Resistance
vs. Temperature
400
Pulse Test
300
I_D = 0.2, 0.7, 1 A
V_GS = 5 V
200
100
–50 –25
10 V
0 25
I_D = 0.2, 0.7, 1 A
50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
100
V_GS = 5 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
tr
10
td(on)
1
tf
td(off)
0.1
0.1
1
10
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
100
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
Target Specifications
1000
Body-Drain Diode Reverse
Recovery Time
100
10
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
1
0.1
1
10
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
1.5
Pulse Test
V_GS = 5 V
1
0.5
0
0 0.2 0.4 0.6 0.8 2.0
Source to Drain Voltage V_SD (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
8
24 V
6
V_DD = 16 V
4
2
0
1
10
100
Shutdown Time of Load-Short Test PW (mS)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
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