RJF0610JSP_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0610JSP
Target Specifications
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 5. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
I_IH(sd)3
Tsd
Thr
Vop
I_{D limit}
Min
3.5
—
—
—
—
—
—
—
—
—
3.5
1.5
Typ
—
—
—
—
—
0.4
0.24
0.16
175
120
—
—
Max
—
1.2
100
50
1
—
—
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
mA
C
C
V
A
(Ta = 25°C)
Test Conditions
Vi = 5 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Vi = 1.2 V, V_DS = 0
Vi = 8 V, V_DS = 0
Vi = 5 V, V_DS = 0
Vi = 3.5 V, V_DS = 0
Channel temperature
Channel temperature
V_GS = 5 V, V_DS = 10 V ^{Note 5}
Electrical Characteristics
Item
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
I_D1
I_D2
I_D3
V_(BR)DSS
V_(BR)GSS
V_(BR)GSS
I_GSS1
I_GSS2
I_GSS3
I_GSS4
I_GS(OP)1
I_GS(OP)2
I_GS(OP)3
I_DSS1
I_DSS2
Min
—
—
1.5
60
16
–2.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.4
0.24
0.16
—
—
Max
2.4
10
—
—
—
—
100
50
1
–100
—
—
—
10
10
Unit
A
mA
—
V
V
V
A
A
A
A
mA
mA
mA
A
A
Gate to source cutoff voltage
Static drain to source on state
resistance
V_GS(off)
1.4
—
2.5
V
R_DS(on)
—
207
285
m
R_DS(on)
—
153
214
m
Output capacitance
Coss
—
267
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
4.3
—
s
t_r
—
18.3
—
s
t_d(off)
—
0.62
—
s
t_f
—
0.61
—
s
Body-drain diode forward voltage
V_DF
—
0.8
—
V
Body-drain diode reverse recovery
t_rr
—
55
—
ns
time
Over load shut down
operation time ^{Note 7}
t_os1
—
18
—
ms
t_os2
—
5.7
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = 3.5 V, V_DS = 2 V
V_GS = 1.2 V, V_DS = 2 V
V_GS = 5 V, V_DS = 10 V ^{Note 6}
I_D = 10 mA, V_GS = 0
I_G = 500 A, V_DS = 0
I_G = –100 A, V_DS = 0
V_GS = 5 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_GS = 1.2 V, V_DS = 0
V_GS = –2.4 V, V_DS = 0
V_GS = 8 V, V_DS = 0
V_GS = 5 V, V_DS = 0
V_GS = 3.5 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 48 V, V_GS = 0,
Ta = 125C
I_D = 1 mA, V_DS = 10 V
I_D = 0.7 A, V_GS = 5 V ^{Note 6}
I_D = 0.7 A, V_GS = 10 V ^{Note 6}
V_DS = 10 V, V_GS = 0, f = 1MHz
I_D= 0.7 A, V_GS = 5 V, R_L = 43 
I_F = 1.5 A, V_GS = 0
I_F = 1.5 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = 5 V, V_DD = 16 V
V_GS = 5 V, V_DD = 24 V
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
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