RJF0610JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Series Power Switching

RJF0610JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
8, 10 V
4
6V
5V
Pulse Test
3
2
4V
1
3.5 V
V_GS = 0 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
600
Pulse Test
400
200
I_D = 1 A
0.7 A
0.2 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS0568EJ0200 Rev.2.00
Apr 16, 2012
Target Specifications
Maximum Safe Operation Area
100
Ta = 25°C
1 shot pulse
10 ^{1 Drive Operation}
Thermal shut down
Operation area
1
0.1
0.01
PW
1 _ms
DC _Operation
Operation in
this area is
limited by R_{DS (on)}
(PW
=
≤
10 _ms
10 ^N_s^o₎^te
7
0.001
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
1.5
Tc = –40°C
25°C
75°C
1.0
0.5
V_DS = 10 V
Pulse Test
0
012 345 6
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10000
1000
100
V_GS = 5 V
10 V
10
0.1 0.2 0.5 1 2
Pulse Test
5 10 20
Drain Current I_D (A)
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