RJE0618JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – –60V, –10A, P Channel Thermal FET Power Switching

RJE0618JSP
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
V_DD = −16 V
−8
−24 V
−6
−4
−2
−0
0.1
1
10
Shutdown Time of Load-Short Test PW (ms)
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = −0.5 A
100
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01 ^0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch − f(t) = γs (t) • θch − f
θch − f = 83.3 °C/ W, Ta = 25 °C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10 100 1000 10000
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
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