RJE0618JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – –60V, –10A, P Channel Thermal FET Power Switching

RJE0618JSP
Static Drain to Source On State Resistance
vs. Temperature
250
Pulse Test
I_D = −5 A
200
−2 A
−1 A
150
V_GS = −4 V
100
−5 A
I_D = −1 A, −2 A
50 ^VGS ^{= −10 V}
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
100
td(off) tf
10
tr
1
td(on)
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
0.1
−0.1
−1
−10
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
100
10
−0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
−0.1
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
−1
−10
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
−4
V_GS = −5 V
−3
−2
V_GS = 0 V, 5 V
−1
Pulse Test
0
−0.4 −0.8 −1.2 −1.6 −2.0
Source to Drain Voltage V_SD (V)
Forward transfer admittance vs.
Drain Current
100
Ta = –40°C
10
25°C
1
150°C
0.1
–0.1
V_DS = –10 V
Pulse Test
–1
–10
Drain Current I_D (A)
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
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