RJE0618JSP_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – –60V, –10A, P Channel Thermal FET Power Switching

RJE0618JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
I_{D limt}
Min
–3.5
—
—
—
—
—
—
—
–3.5
–10
Typ
—
—
—
—
—
–0.8
–0.35
175
—
—
Max
—
–1.2
–100
–50
–10
—
—
—
–12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
V_GS = –12 V, V_DS = –10 V ^{Note 4}
Electrical Characteristics
Item
Symbol Min
Drain current
I_D1
—
I_D2
—
I_D3
–10
Drain to source breakdown
voltage
V_(BR)DSS
–60
Gate to source breakdown
voltage
V_(BR)GSS
V_(BR)GSS
–16
2.5
Gate to source leak current
I_GSS1
—
I_GSS2
—
I_GSS3
—
I_GSS4
—
Input current (shut down)
I_GS(OP)1
—
I_GS(OP)2
—
Zero gate voltage drain current
I_DSS1
—
Zero gate voltage drain current
I_DSS2
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
Max
–16
–10
—
—
—
—
–100
–50
–10
100
—
—
–10
–10
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
μA
Gate to source cutoff voltage
V_GS(off)
–1.0
—
–2.1
V
Forward transfer admittance
|y_fs|
5
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
8.4
—
S
134
180
mΩ
98
120
mΩ
Output capacitance
Coss
—
444
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
2.6
—
μs
t_r
—
10.9
—
μs
t_d(off)
—
2.2
—
μs
t_f
—
3.4
—
μs
Body-drain diode forward
voltage
V_DF
—
–0.92
—
V
Body-drain diode reverse
recovery time
t_rr
—
100
—
ns
Over load shut down
operation time ^{Note 6}
t_os1
—
2.54
—
ms
t_os2
—
1.35
—
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 5}
I_D = –10 mA, V_GS = 0
I_G = –800 μA, V_DS = 0
I_G = 100 μA, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0,
Ta = 125°C
V_DS = –10 V, I_D = –1 mA
I_D = –5 mA, V_DS = –10 V ^{Note 5}
I_D = –5 A, V_GS = –6 V ^{Note 5}
I_D = –5 A, V_GS = –10 V ^{Note 5}
V_DS = –10 V, V_GS = 0, f = 1MHz
V_GS = –10 V, I_D= –5 A,
R_L = 6 Ω
I_F = –10 A, V_GS = 0 ^{Note 5}
I_F = –10 A, V_GS = 0
di_F/dt = 50 A/μs
V_GS = –5 V, V_DD = –16 V
V_GS = –5 V, V_DD = –24 V
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
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