RJE0618JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – –60V, –10A, P Channel Thermal FET Power Switching

RJE0618JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
−10
−4.0 V
−5.0 V
−8
−6
−8.0 V
−10.0 V
V_GS = −3.5 V
−4
−2
Pulse Test
0
−2 −4
−6
−8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−2000
Pulse Test
−1600
−1200
−800
−400
I_D = −5 A
−2 A
−1 A
−0
−0 −2 −4 −6 −8 −10 −12 −14 −16
Gate to Source Voltage V_GS (V)
R07DS1147EJ0200 Rev.2.00
Jun 26, 2014
Preliminary
Maximum Safe Operation Area
−100
Ta = 25°C
Thermal shut down
operation area
−10
PW
−1
= _{10 ms}
−0.1
Operation
in this area
is limited R_DS(on)
−0.01
−0.01 −0.1
−1
−10 −100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
−10
V_DS = −10 V
Pulse Test
−8
−6
−4
Tc = 150°C
−2
25°C
−40°C
−0
−1 −2 −3 −4 −5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
V_GS = −4 V
100
−10 V
10
−0.1
−1
−10
Drain Current I_D (A)
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