RJE0617JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – –60V, –1.5A, P Channel Thermal FET Power Switching

RJE0617JSP
Preliminary
Forward transfer admittance vs.
Drain Current
10
Ta = –40°C
25°C
1
150°C
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
0.1
–0.1
V_DS = –10 V
Pulse Test
–1
–10
Drain Current I_D (A)
120
100 ^{ID = –0.2 A}
0
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
0.0001
10
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
1 m 10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
1
0.1
0.01
0.001
0.0001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
1m
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
R07DS1070EJ0400 Rev.4.00
Sep 13, 2013
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