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RJE0617JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – –60V, –1.5A, P Channel Thermal FET Power Switching | |||
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RJE0617JSP
Static Drain to Source On State Resistance
vs. Temperature
800
Pulse Test
â0.75 A
ID = â1.5 A
600
VGS = â3 V
â0.4 A
â0.4 A
400
â0.4 A
â0.75 A
200
â4 V ID = â1.5 A
â10 V
0
â50 â25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
100
10
tf
tr
td(off)
1
td(on)
VGS = â10 V, VDD = â30 V
PW = 300 μs, duty ⤠1 %
0.1
â0.1
â1
â10
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
â1.5
Pulse Test
â1.0
â5 V
VGS = 0 V
â0.5
0
â0.5
â1.0
â1.5
Source to Drain Voltage VSD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
â0.1
di / dt = 50 A /μs
VGS = 0
â1
â10
Reverse Drain Current IDR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Coss
100
10
â0 â10 â20 â30 â40 â50 â60
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
â16
â14
â12
â10
VDD = â16 V
â8
â6
â4
â2
0
0.1
1
10
100
Shutdown Time of Load-Short Test Pw (ms)
R07DS1070EJ0400 Rev.4.00
Sep 13, 2013
Page 4 of 7
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