RJE0617JSP_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – –60V, –1.5A, P Channel Thermal FET Power Switching

RJE0617JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 5. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Thr
Vop
I_{D limt}
Min
–3
—
—
—
—
—
—
—
—
–3
–1.5
Typ
—
—
—
—
—
–0.8
–0.35
175
105
—
—
Max
—
–1.2
–100
–50
–10
—
—
—
—
–12
—
Unit
V
V
µA
µA
µA
mA
mA
°C
°C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
Channel temperature
V_GS = –12 V, V_DS = –10 V ^{Note 5}
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
I_D
I_D
I_D
I_D
V_(BR)DSS
V_(BR)GSS
V_(BR)GSS
I_GSS
I_GSS
I_GSS
I_GSS
I_GS(OP)
I_GS(OP)
I_DSS
I_DSS
Min
–1.5
—
–1.5
–0.8
–60
–16
2.5
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
Max
–12
–40
—
—
—
—
—
–100
–50
–1
100
—
—
–10
–10
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
μA
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
V_GS(off)
–2.2
—
–3.4
V
|y_fs|
1.5
2.7
—
S
R_DS(on)
—
445
800
mΩ
R_DS(on)
—
363
425
mΩ
R_DS(on)
—
272
350
mΩ
Coss
—
213
—
pF
Turn-on delay time
t_d(on)
—
0.9
—
μs
Rise time
t_r
—
3.4
—
μs
Turn-off delay time
t_d(off)
—
3.2
—
μs
Fall time
t_f
—
6.3
—
μs
Body-drain diode forward voltage
V_DF
—
–0.8
—
V
Body-drain diode reverse
recovery time
t_rr
—
70
—
ns
Over load shut down
operation time ^{Note 8}
t_os
—
5.4
—
ms
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 7}
I_D = –10 mA, V_GS = 0
I_G = –800 μA, V_DS = 0
I_G = 100 μA, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0
Ta = 125°C
V_DS = –10 V, I_D = –1 mA
I_D = –0.75 A, V_GS = –10 V ^{Note 7}
I_D = –0.4 A, V_GS = –3V ^{Note 7}
I_D = –0.75 A, V_GS = –4 V ^{Note 7}
I_D = –0.75 A, V_GS = –10 V ^{Note 7}
V_DS = –10 V, V_GS = 0,
f = 1MHz
V_GS = –10 V, I_D= –0.75 A,
R_L = 40 Ω
I_F = –1.5 A, V_GS = 0
I_F = –1.5 A, V_GS = 0
di_F/dt = 50 A/μs
V_GS = –5 V, V_DD = –16 V
R07DS1070EJ0400 Rev.4.00
Sep 13, 2013
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