RJE0617JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – –60V, –1.5A, P Channel Thermal FET Power Switching

RJE0617JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2.0
1.0
2 _{D1rivDerirvOerpOepraetriaotnion}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
−5
−6 V ^{−5 V}
−4
−4 V
−8 V
−3.5 V
−3
−10 V
V_GS = −3 V
−2
−1
Pulse Test
0
−2 −4 −6 −8 −10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
−500
Pulse Test
−400
−300
−200
−0.75 A
−100
−0.4 A
I_D = −0.2 A
0
0 −2 −4 −6 −8 −10 −12
Gate to Source Voltage V_GS (V)
R07DS1070EJ0400 Rev.4.00
Sep 13, 2013
Preliminary
Maximum Safe Operation Area
−100
Ta = 25°C
1 shot Pulse
1 Driver Operation
−10
Thermal shut down
operation area
−1
−0.1
−0.01
−0.01
DC
Operation _PW
Operation
in this area
is limited R_DS(on)
≤ _{10s Note7}
−0.1
−1
−10 −100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
−1.5
V_DS = −10 V
Pulse Test
−1.0
−0.5 _{Tc = 150°C}
25°C
−40°C
0
0
−1
−2
−3
−4
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
10000
Pulse Test
1000
V_GS = −3 V
−10 V
100
−4 V
10
−0.1
−1
−10
Drain Current I_D (A)
Page 3 of 7