RJE0607JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0607JSP
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 I_D = −0.2 A
dv/dt
V_GS ≥ 500 V/ms
100
0
−2 −4 −6 −8 −10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
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