RJE0607JSP_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0607JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 6. Pulse test
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Min
–3.5
—
—
—
—
—
—
—
Vop
I_{D limt}
–3.5
–1.5
Typ
—
—
—
—
—
–0.8
–0.35
175
Max
—
–1.2
–100
–50
–10
—
—
—
—
–12
—
—
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
(dv/dt V_GS  500 V/ms)
V_GS = –12 V, V_DS = –10 V ^{Note 4}
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
I_D1
I_D2
I_D3
V_(BR)DSS
Min
—
—
–1.5
–60
V_(BR)GSS
V_(BR)GSS
I_GSS1
I_GSS2
I_GSS3
I_GSS4
I_GS(OP)1
I_GS(OP)2
I_DSS1
I_DSS2
–16
2.5
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
Max
–2
–10
—
—
—
—
–100
–50
–10
100
—
—
–10
–10
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
A
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
V_GS(off)
–2.2
—
–3.4
V
R_DS(on)
—
185
380
m
R_DS(on)
—
140
260
m
Coss
—
194
—
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
1.82
—
s
t_r
—
1.95
—
s
t_d(off)
—
0.99
—
s
t_f
—
0.84
—
s
Body-drain diode forward voltage
V_DF
—
0.83
—
V
Body-drain diode reverse
t_rr
—
85
—
ns
recovery time
Over load shut down
operation time ^{Note 8}
t_os1
—
18.6
—
ms
Notes: 7. Pulse test
8. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
V_GS = –3.5 V, V_DS = –10 V
V_GS = –1.2 V, V_DS = –10 V
V_GS = –12 V, V_DS = –10 V ^{Note 7}
I_D = –10 mA, V_GS = 0
I_G = –800 A, V_DS = 0
I_G = 100 A, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_GS = –1.2 V, V_DS = 0
V_GS = 2.4 V, V_DS = 0
V_GS = –8 V, V_DS = 0
V_GS = –3.5 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0
Ta = 125C
V_DS = –10 V, I_D = –1 mA
I_D = –0.75 A, V_GS = –6 V ^{Note 7}
I_D = –0.75 A, V_GS = –10 V ^{Note 7}
V_DS = –10 V, V_GS = 0, f =
1MHz
V_GS = –10 V, I_D= –0.75 A,
R_L = 40 
I_F = –1.5 A, V_GS = 0
I_F = –1.5 A, V_GS = 0
di_F/dt = 50 A/s
V_GS = –5 V, V_DD = –16 V
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
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