RJE0607JSP_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

RJE0607JSP
Static Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
I_D = −1 A
−0.2 A, −0.5 A
300
200 ^{VGS = −6 V}
100
I_D = −0.2 A, −0.5 A, −1 A
−10 V
0
−50 −25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(on)
1
td(off)
tf
V_GS = −10 V, V_DD = −30 V
PW = 300 μs, duty ≤ 1 %
0.1
−0.1
−1
−10
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
–2.0
–10 V
–1.5
Pulse Test
–1.0
–0.5
–5 V
V_GS = 0 V
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
−0.1
di / dt = 50 A /μs
V_GS = 0, Ta = 25°C
−1
−10
Reverse Drain Current I_DR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Coss
100
10
−0 −10 −20 −30 −40 −50 −60
Drain to Source Voltage V_DS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
V_DD = −16 V
−8
−6
−4
−2
0
1
10
100
Shutdown Time of Load-Short Test Pw (ms)
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
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